PART |
Description |
Maker |
FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块,用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
FU-319SPA-W6M20 319SPA-V6M20 319SPA-W6M20 319SPA-X |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE 铟镓砷APD的前置放大器模块,用.31微米.55 UM的波长范
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
FRM5W231LT FRM5W231KT |
InGaAs-APD/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
FRM5N143DS |
InGaAs-APD/Preamp Receiver
|
List of Unclassifed Manufacturers ETC[ETC]
|
NR8500 NR8500FR-BB-AZ NR8500FR-CB-AZ NR8500CP-BC-A |
CAP 1.0PF 25V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓APD的同轴包55字节/秒和622 Mb / s的应 NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓砷APD的同轴包55字节/秒和622 Mb / s的应 NECs φ50 μm InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
California Eastern Laboratories, Inc. California Eastern Labs
|
FRM3Z232BS FRM3Z232BS-A |
InGaAs-PIN/Preamp Preamp
|
Eudyna Devices Inc
|
G8931-20 |
InGaAs APD
|
Hamamatsu Corporation
|
G8931-04 |
InGaAs APD
|
Hamamatsu Corporation
|
NR4510UR |
InGaAs APD ROSA
|
CEL
|
NR4510UT |
InGaAs APD RECEIVER
|
CEL
|
G8925-24 G8925 G8925-21 G8925-22 G8925-23 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics HAMAMATSU[Hamamatsu Corporation]
|
NR8360JP-BC |
30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
California Eastern Laboratories
|